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Opt Express. 2007 Jul 23;15(15):9843-8. doi: 10.1364/oe.15.009843.

High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide.

Optics express

Laurent Vivien, Mathieu Rouvière, Jean-Marc Fédéli, Delphine Marris-Morini, Jean François Damlencourt, Juliette Mangeney, Paul Crozat, Loubna El Melhaoui, Eric Cassan, Xavier Le Roux, Daniel Pascal, Suzanne Laval

PMID: 19547334 DOI: 10.1364/oe.15.009843


We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize those MSM Ge photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 microm wavelength with a responsivity as high as 1 A/W. The used technological processes are compatible with complementary-metal-oxide-semiconductor (CMOS) technology.

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