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Li J, Wang Q, Yue W, et al. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors. Nanoscale. 2014;6(15):8956-61doi: 10.1039/c4nr00978a.
Li, J., Wang, Q., Yue, W., Guo, Z., Li, L., Zhao, C., Wang, X., Abutaha, A. I., Alshareef, H. N., Zhang, Y., & Zhang, X. X. (2014). Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors. Nanoscale, 6(15), 8956-61. https://doi.org/10.1039/c4nr00978a
Li, Jingqi, et al. "Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors." Nanoscale vol. 6,15 (2014): 8956-61. doi: https://doi.org/10.1039/c4nr00978a
Li J, Wang Q, Yue W, Guo Z, Li L, Zhao C, Wang X, Abutaha AI, Alshareef HN, Zhang Y, Zhang XX. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors. Nanoscale. 2014 Aug 07;6(15):8956-61. doi: 10.1039/c4nr00978a. PMID: 24965261.
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Nanoscale. 2014 Aug 07;6(15):8956-61. doi: 10.1039/c4nr00978a.

Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors.

Nanoscale

Jingqi Li, Qingxiao Wang, Weisheng Yue, Zaibing Guo, Liang Li, Chao Zhao, Xianbin Wang, Anas I Abutaha, H N Alshareef, Yafei Zhang, X X Zhang

Affiliations

  1. ANIC Fab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia. [email protected] [email protected].

PMID: 24965261 DOI: 10.1039/c4nr00978a

Abstract

Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations.

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