Display options
Share it on

Opt Express. 2017 May 15;25(10):11217-11222. doi: 10.1364/OE.25.011217.

Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band.

Optics express

Diego Perez-Galacho, Charles Baudot, Tifenn Hirtzlin, Sonia Messaoudène, Nathalie Vulliet, Paul Crozat, Frederic Boeuf, Laurent Vivien, Delphine Marris-Morini

PMID: 28788803 DOI: 10.1364/OE.25.011217

Abstract

In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a 300 mm platform is presented. The measured modulation efficiency (VπLπ) was comprised between 0.95 V cm and 1.15 V cm, which is comparable to the state-of-the-art modulators in the C-Band, that enabled its use with a driving voltage of 3.3 V

Publication Types