Cite
Sakamoto K, Kim TH, Kuzumaki T, et al. Valley spin polarization by using the extraordinary Rashba effect on silicon. Nat Commun. 2013;4:2073doi: 10.1038/ncomms3073.
Sakamoto, K., Kim, T. H., Kuzumaki, T., Müller, B., Yamamoto, Y., Ohtaka, M., Osiecki, J. R., Miyamoto, K., Takeichi, Y., Harasawa, A., Stolwijk, S. D., Schmidt, A. B., Fujii, J., Uhrberg, R. I., Donath, M., Yeom, H. W., & Oda, T. (2013). Valley spin polarization by using the extraordinary Rashba effect on silicon. Nature communications, 42073. https://doi.org/10.1038/ncomms3073
Sakamoto, Kazuyuki, et al. "Valley spin polarization by using the extraordinary Rashba effect on silicon." Nature communications vol. 4 (2013): 2073. doi: https://doi.org/10.1038/ncomms3073
Sakamoto K, Kim TH, Kuzumaki T, Müller B, Yamamoto Y, Ohtaka M, Osiecki JR, Miyamoto K, Takeichi Y, Harasawa A, Stolwijk SD, Schmidt AB, Fujii J, Uhrberg RI, Donath M, Yeom HW, Oda T. Valley spin polarization by using the extraordinary Rashba effect on silicon. Nat Commun. 2013;4:2073. doi: 10.1038/ncomms3073. PMID: 23811797.
Copy
Download .nbib