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Lee H, Carini JP, Baxter DV, et al. Quantum-critical conductivity scaling for a metal-insulator transition. Science. 2000;287(5453):633-6doi: 10.1126/science.287.5453.633.
Lee, H., Carini, J. P., Baxter, D. V., Henderson, W., & Gruner, G. (2000). Quantum-critical conductivity scaling for a metal-insulator transition. Science (New York, N.Y.), 287(5453), 633-6. https://doi.org/10.1126/science.287.5453.633
Lee, et al. "Quantum-critical conductivity scaling for a metal-insulator transition." Science (New York, N.Y.) vol. 287,5453 (2000): 633-6. doi: https://doi.org/10.1126/science.287.5453.633
Lee H, Carini JP, Baxter DV, Henderson W, Gruner G. Quantum-critical conductivity scaling for a metal-insulator transition. Science. 2000 Jan 28;287(5453):633-6. doi: 10.1126/science.287.5453.633. PMID: 10649993.
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Science. 2000 Jan 28;287(5453):633-6. doi: 10.1126/science.287.5453.633.

Quantum-critical conductivity scaling for a metal-insulator transition.

Science (New York, N.Y.)

Lee, Carini, Baxter, Henderson, Gruner

Affiliations

  1. Department of Physics, Indiana University, Bloomington, IN 47405, USA. Department of Physics, University of California, Los Angeles, CA 90095-1547, USA.

PMID: 10649993 DOI: 10.1126/science.287.5453.633

Abstract

Temperature (T)- and frequency (omega)-dependent conductivity measurements are reported here in amorphous niobium-silicon alloys with compositions (x) near the zero-temperature metal-insulator transition. There is a one-to-one correspondence between the frequency- and temperature-dependent conductivity on both sides of the critical concentration, thus establishing the quantum-critical nature of the transition. The analysis of the conductivity leads to a universal scaling function and establishes the critical exponents. This scaling can be described by an x-, T-, and omega-dependent characteristic length, the form of which is derived by experiment.

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