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Zheng LX, Xie MH, Seutter SM, et al. Observation of "Ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy. Phys Rev Lett. 2000;85(11):2352-5doi: 10.1103/PhysRevLett.85.2352.
Zheng, L. X., Xie, M. H., Seutter, S. M., Cheung, S. H., & Tong, S. Y. (2000). Observation of "Ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy. Physical review letters, 85(11), 2352-5. https://doi.org/10.1103/PhysRevLett.85.2352
Zheng, et al. "Observation of "Ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy." Physical review letters vol. 85,11 (2000): 2352-5. doi: https://doi.org/10.1103/PhysRevLett.85.2352
Zheng LX, Xie MH, Seutter SM, Cheung SH, Tong SY. Observation of "Ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy. Phys Rev Lett. 2000 Sep 11;85(11):2352-5. doi: 10.1103/PhysRevLett.85.2352. PMID: 10978008.
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Phys Rev Lett. 2000 Sep 11;85(11):2352-5. doi: 10.1103/PhysRevLett.85.2352.

Observation of "Ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy.

Physical review letters

Zheng, Xie, Seutter, Cheung, Tong

Affiliations

  1. Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong and State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.

PMID: 10978008 DOI: 10.1103/PhysRevLett.85.2352

Abstract

We observe "ghost" islands formed on terraces during homoepitaxial nucleation of GaN. We attribute the ghost islands to intermediate nucleation states, which can be driven into "normal" islands by scanning tunneling microscopy. The formation of ghost islands is related to excess Ga atoms on the surface. The excess Ga also affect island number density: by increasing Ga coverage, the island density first decreases, reaching a minimum at about 1 monolayer (ML) Ga and then increases rapidly for coverages above 1 ML. This nonmonotonic behavior points to a surfactant effect of the Ga atoms.

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