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Kiuchi M, Matsumoto T, Yoshikawa T, et al. Crystallization in low-energy deposition of titanium ions. Colloids Surf B Biointerfaces. 2000;19(3):269-273doi: 10.1016/s0927-7765(00)00165-x.
Kiuchi, M., Matsumoto, T., Yoshikawa, T., Goto, S., & Ensinger, W. (2000). Crystallization in low-energy deposition of titanium ions. Colloids and surfaces. B, Biointerfaces, 19(3), 269-273. https://doi.org/10.1016/s0927-7765(00)00165-x
Kiuchi, et al. "Crystallization in low-energy deposition of titanium ions." Colloids and surfaces. B, Biointerfaces vol. 19,3 (2000): 269-273. doi: https://doi.org/10.1016/s0927-7765(00)00165-x
Kiuchi M, Matsumoto T, Yoshikawa T, Goto S, Ensinger W. Crystallization in low-energy deposition of titanium ions. Colloids Surf B Biointerfaces. 2000 Dec 30;19(3):269-273. doi: 10.1016/s0927-7765(00)00165-x. PMID: 10967501.
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Colloids Surf B Biointerfaces. 2000 Dec 30;19(3):269-273. doi: 10.1016/s0927-7765(00)00165-x.

Crystallization in low-energy deposition of titanium ions.

Colloids and surfaces. B, Biointerfaces

Kiuchi, Matsumoto, Yoshikawa, Goto, Ensinger

Affiliations

  1. Osaka National Research Institute, Midorigaoka, Ikeda, 563-8577, Osaka, Japan

PMID: 10967501 DOI: 10.1016/s0927-7765(00)00165-x

Abstract

To investigate crystallization in the ion beam deposition process, titanium ions were deposited on silicon wafers at 105 and 55 eV. As titanium is an active metal, titanium compounds are formed by absorbing backfilled or residual gas. At energy levels of 105 or 55 eV, titanium crystallizes in a NaCl-type titanium compound with the backfilling of air. In all samples, (110)-oriented crystals grew with a rectangular lattice arrangement of titanium atoms. The open channel <110> of preferentially oriented crystal growth was parallel to the direction of incident ions normal to the substrate surface.

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