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Vailionis A, Cho B, Glass G, et al. Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Phys Rev Lett. 2000;85(17):3672-5doi: 10.1103/PhysRevLett.85.3672.
Vailionis, A., Cho, B., Glass, G., Desjardins, P., Cahill, D. G., & Greene, J. E. (2000). Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Physical review letters, 85(17), 3672-5. https://doi.org/10.1103/PhysRevLett.85.3672
Vailionis, et al. "Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001)." Physical review letters vol. 85,17 (2000): 3672-5. doi: https://doi.org/10.1103/PhysRevLett.85.3672
Vailionis A, Cho B, Glass G, Desjardins P, Cahill DG, Greene JE. Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Phys Rev Lett. 2000 Oct 23;85(17):3672-5. doi: 10.1103/PhysRevLett.85.3672. PMID: 11030978.
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Phys Rev Lett. 2000 Oct 23;85(17):3672-5. doi: 10.1103/PhysRevLett.85.3672.

Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001).

Physical review letters

Vailionis, Cho, Glass, Desjardins, Cahill, Greene

Affiliations

  1. Department of Materials Science and the Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA.

PMID: 11030978 DOI: 10.1103/PhysRevLett.85.3672

Abstract

The two-dimensional (2D) to three-dimensional (3D) morphological transition in strained Ge layers grown on Si(001) is investigated using scanning tunneling microscopy. The initial step takes place via the formation of 2D islands which evolve into small ( approximately 180 A) 3D islands with a height to base diameter ratio of approximately 0.04, much smaller than the 0.1 aspect ratio of 105-faceted pyramids which had previously been assumed to be the initial 3D islands. The "prepyramid" Ge islands have rounded bases with steps oriented along <110> and exist only over a narrow range of Ge coverages, 3.5-3.9 monolayers.

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