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Dreiner S, Schürmann M, Westphal C, et al. Local atomic environment of Si suboxides at the SiO2/Si(111) interface determined by angle-scanned photoelectron diffraction. Phys Rev Lett. 2001;86(18):4068-71doi: 10.1103/PhysRevLett.86.4068.
Dreiner, S., Schürmann, M., Westphal, C., & Zacharias, H. (2001). Local atomic environment of Si suboxides at the SiO2/Si(111) interface determined by angle-scanned photoelectron diffraction. Physical review letters, 86(18), 4068-71. https://doi.org/10.1103/PhysRevLett.86.4068
Dreiner, S, et al. "Local atomic environment of Si suboxides at the SiO2/Si(111) interface determined by angle-scanned photoelectron diffraction." Physical review letters vol. 86,18 (2001): 4068-71. doi: https://doi.org/10.1103/PhysRevLett.86.4068
Dreiner S, Schürmann M, Westphal C, Zacharias H. Local atomic environment of Si suboxides at the SiO2/Si(111) interface determined by angle-scanned photoelectron diffraction. Phys Rev Lett. 2001 Apr 30;86(18):4068-71. doi: 10.1103/PhysRevLett.86.4068. PMID: 11328097.
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Phys Rev Lett. 2001 Apr 30;86(18):4068-71. doi: 10.1103/PhysRevLett.86.4068.

Local atomic environment of Si suboxides at the SiO2/Si(111) interface determined by angle-scanned photoelectron diffraction.

Physical review letters

S Dreiner, M Schürmann, C Westphal, H Zacharias

Affiliations

  1. Westfälische Wilhelms-Universität Münster, Physikalisches Institut, Wilhelm-Klemm-Strasse 10, 48149 Münster, Germany.

PMID: 11328097 DOI: 10.1103/PhysRevLett.86.4068

Abstract

Local environments of Si suboxides at the interface between a thermally grown SiO2 film and Si(111) were studied by angle-scanned photoelectron diffraction. Si 2p core-level spectra containing chemically shifted components were recorded. The components were deconvoluted by least squares fitting and assigned to different Si oxidation states. The obtained diffraction patterns of the various suboxides exhibit different features. Comparison of these patterns with multiple scattering calculations including a multipole R-factor analysis shows that a simple chemical abrupt interface model describes well the environment of the suboxides and indicates ordered SiO2 close to the interface.

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