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Appl Radiat Isot. 2001 Aug;55(2):215-20. doi: 10.1016/s0969-8043(00)00383-3.

Contributions to the radiation chemistry of octasilsesquioxanes: unique traps for atomic hydrogen and free radicals at ambient temperature.

Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine

R Stösser, M Päch

Affiliations

  1. Institute of Chemistry, Humboldt-University of Berlin, Germany. [email protected]

PMID: 11393762 DOI: 10.1016/s0969-8043(00)00383-3

Abstract

Evidence was given for trapping of H-atoms in fluid solutions of octasilsesquioxanes. Use was made of the positive effect of scavengers on the yield of trapped H-atoms. Carbon and silicon-centered radicals formed simultaneously through radiation chemical processes were detected. Most of the radical species were identified by the simulation of the corresponding ESR spectra. A wide range of thermal stability is covered by the radicals depending on the chemical nature of the substitutents of the cages and the precursors.

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