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Kouvetakis J, McMurran J, Matsunaga P, et al. Synthesis and Structure of a Novel Lewis Acid-Base Adduct, (H(3)C)(3)SiN(3).GaCl(3), en Route to Cl(2)GaN(3) and Its Derivatives: Inorganic Precursors to Heteroepitaxial GaN. Inorg Chem. 1997;36(9):1792-1797doi: 10.1021/ic961273r.
Kouvetakis, J., McMurran, J., Matsunaga, P., O'Keeffe, M., & Hubbard, J. L. (1997). Synthesis and Structure of a Novel Lewis Acid-Base Adduct, (H(3)C)(3)SiN(3).GaCl(3), en Route to Cl(2)GaN(3) and Its Derivatives: Inorganic Precursors to Heteroepitaxial GaN. Inorganic chemistry, 36(9), 1792-1797. https://doi.org/10.1021/ic961273r
Kouvetakis, J., et al. "Synthesis and Structure of a Novel Lewis Acid-Base Adduct, (H(3)C)(3)SiN(3).GaCl(3), en Route to Cl(2)GaN(3) and Its Derivatives: Inorganic Precursors to Heteroepitaxial GaN." Inorganic chemistry vol. 36,9 (1997): 1792-1797. doi: https://doi.org/10.1021/ic961273r
Kouvetakis J, McMurran J, Matsunaga P, O'Keeffe M, Hubbard JL. Synthesis and Structure of a Novel Lewis Acid-Base Adduct, (H(3)C)(3)SiN(3).GaCl(3), en Route to Cl(2)GaN(3) and Its Derivatives: Inorganic Precursors to Heteroepitaxial GaN. Inorg Chem. 1997 Apr 23;36(9):1792-1797. doi: 10.1021/ic961273r. PMID: 11669782.
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Inorg Chem. 1997 Apr 23;36(9):1792-1797. doi: 10.1021/ic961273r.

Synthesis and Structure of a Novel Lewis Acid-Base Adduct, (H(3)C)(3)SiN(3).GaCl(3), en Route to Cl(2)GaN(3) and Its Derivatives: Inorganic Precursors to Heteroepitaxial GaN.

Inorganic chemistry

J. Kouvetakis, Jeff McMurran, P. Matsunaga, M. O'Keeffe, John L. Hubbard

Affiliations

  1. Department of Chemistry and Biochemistry, Utah State University, Logan, Utah 84322-0300.

PMID: 11669782 DOI: 10.1021/ic961273r

Abstract

The formation of a novel Lewis acid-base complex between the silyl azide Si(CH(3))(3)N(3) and GaCl(3) having the formula (H(3)C)(3)SiN(3).GaCl(3)()()(1) is demonstrated. The X-ray crystal structure of 1 shows that the electron-donating site is the nitrogen atom directly bonded to the organometallic group. Compound 1 crystallizes in the orthorhombic space group Pnma, with cell dimensions a = 15.823(10) Å, b = 10.010(5) Å, c = 7.403(3) Å, and Z = 4. Low-temperature decomposition of 1 via loss of (H(3)C)(3)SiCl yields Cl(2)GaN(3) (2), which serves as the first totally inorganic (C,H-free) precursor to heteroepitaxial GaN by ultrahigh-vacuum chemical vapor deposition. A volatile monomeric Lewis acid-base adduct of 2 with trimethylamine, Cl(2)GaN(3).N(CH(3))(3) (3), has also been prepared and utilized to grow high-quality GaN on Si and basal plane sapphire substrates. The valence bond model is used to analyze bond lengths in organometallic azides and related adducts.

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