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Kravchenko SV, Shashkin AA, Dolgopolov VT. Comment on "low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers". Phys Rev Lett. 2002;89(21):219701; author reply 219702doi: 10.1103/PhysRevLett.89.219701.
Kravchenko, S. V., Shashkin, A. A., & Dolgopolov, V. T. (2002). Comment on "low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers". Physical review letters, 89(21), 219701; author reply 219702. https://doi.org/10.1103/PhysRevLett.89.219701
Kravchenko, S V, et al. "Comment on "low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers"." Physical review letters vol. 89,21 (2002): 219701; author reply 219702. doi: https://doi.org/10.1103/PhysRevLett.89.219701
Kravchenko SV, Shashkin AA, Dolgopolov VT. Comment on "low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers". Phys Rev Lett. 2002 Nov 18;89(21):219701; author reply 219702. doi: 10.1103/PhysRevLett.89.219701. Epub 2002 Nov 04. PMID: 12443453.
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Phys Rev Lett. 2002 Nov 18;89(21):219701; author reply 219702. doi: 10.1103/PhysRevLett.89.219701. Epub 2002 Nov 04.

Comment on "low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers".

Physical review letters

S V Kravchenko, A A Shashkin, V T Dolgopolov

Affiliations

  1. Physics Department Northeastern University Boston, Massachusetts 02115, USA.

PMID: 12443453 DOI: 10.1103/PhysRevLett.89.219701

[No abstract available.]

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