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Theodoropoulou N, Hebard AF, Overberg ME, et al. Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C. Phys Rev Lett. 2002;89(10):107203doi: 10.1103/PhysRevLett.89.107203.
Theodoropoulou, N., Hebard, A. F., Overberg, M. E., Abernathy, C. R., Pearton, S. J., Chu, S. N., & Wilson, R. G. (2002). Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C. Physical review letters, 89(10), 107203. https://doi.org/10.1103/PhysRevLett.89.107203
Theodoropoulou, N, et al. "Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C." Physical review letters vol. 89,10 (2002): 107203. doi: https://doi.org/10.1103/PhysRevLett.89.107203
Theodoropoulou N, Hebard AF, Overberg ME, Abernathy CR, Pearton SJ, Chu SN, Wilson RG. Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C. Phys Rev Lett. 2002 Sep 02;89(10):107203. doi: 10.1103/PhysRevLett.89.107203. Epub 2002 Aug 15. PMID: 12225220.
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Phys Rev Lett. 2002 Sep 02;89(10):107203. doi: 10.1103/PhysRevLett.89.107203. Epub 2002 Aug 15.

Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C.

Physical review letters

N Theodoropoulou, A F Hebard, M E Overberg, C R Abernathy, S J Pearton, S N G Chu, R G Wilson

Affiliations

  1. Department of Physics, University of Florida, Gainesville 32611-8440, USA.

PMID: 12225220 DOI: 10.1103/PhysRevLett.89.107203

Abstract

Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at. %. The magnetism is suppressed when the Mn dose is increased or decreased away from the 3 at. % value, or when n-type GaP substrates are used. At low temperatures the saturated moment is on the order of 1 Bohr magneton, and the spin wave stiffness inferred from the Bloch-law T(3/2) dependence of the magnetization provides an estimate T(c)=385 K of the Curie temperature that exceeds the experimental value, T(c)=270 K. The presence of ferromagnetic clusters and hysteresis to temperatures of at least 330 K is attributed to disorder and proximity to a metal-insulating transition.

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