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Ramana CV, Masse P, Smith RJ, et al. Using metallic interlayers to stabilize abrupt, epitaxial metal-metal interfaces. Phys Rev Lett. 2003;90(6):066101doi: 10.1103/PhysRevLett.90.066101.
Ramana, C. V., Masse, P., Smith, R. J., & Choi, B. S. (2003). Using metallic interlayers to stabilize abrupt, epitaxial metal-metal interfaces. Physical review letters, 90(6), 066101. https://doi.org/10.1103/PhysRevLett.90.066101
Ramana, C V, et al. "Using metallic interlayers to stabilize abrupt, epitaxial metal-metal interfaces." Physical review letters vol. 90,6 (2003): 066101. doi: https://doi.org/10.1103/PhysRevLett.90.066101
Ramana CV, Masse P, Smith RJ, Choi BS. Using metallic interlayers to stabilize abrupt, epitaxial metal-metal interfaces. Phys Rev Lett. 2003 Feb 14;90(6):066101. doi: 10.1103/PhysRevLett.90.066101. Epub 2003 Feb 10. PMID: 12633303.
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Phys Rev Lett. 2003 Feb 14;90(6):066101. doi: 10.1103/PhysRevLett.90.066101. Epub 2003 Feb 10.

Using metallic interlayers to stabilize abrupt, epitaxial metal-metal interfaces.

Physical review letters

C V Ramana, P Masse, R J Smith, Bum-Sik Choi

Affiliations

  1. Physics Department, Montana State University, Bozeman, Montana 59717, USA.

PMID: 12633303 DOI: 10.1103/PhysRevLett.90.066101

Abstract

An approach is described for stabilizing metal-metal epitaxial interfaces using a thin metallic interlayer. Rutherford backscattering and channeling techniques along with low-energy electron diffraction and keV He+ ion backscattering are used to demonstrate that an atomically thin layer of Ti deposited at the Fe-Al interface, a system well known for considerable intermixing at room temperature, forms a thin interface alloy that prevents interdiffusion and improves epitaxial growth of Fe on Al(100). The structure is stable up to about 200 degrees C.

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