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Matias IR, Del Villar I, Arregui FJ, et al. Comparative study of the modeling of three-dimensional photonic bandgap structures. J Opt Soc Am A Opt Image Sci Vis. 2003;20(4):644-54doi: 10.1364/josaa.20.000644.
Matias, I. R., Del Villar, I., Arregui, F. J., & Claus, R. O. (2003). Comparative study of the modeling of three-dimensional photonic bandgap structures. Journal of the Optical Society of America. A, Optics, image science, and vision, 20(4), 644-54. https://doi.org/10.1364/josaa.20.000644
Matias, Ignacio R, et al. "Comparative study of the modeling of three-dimensional photonic bandgap structures." Journal of the Optical Society of America. A, Optics, image science, and vision vol. 20,4 (2003): 644-54. doi: https://doi.org/10.1364/josaa.20.000644
Matias IR, Del Villar I, Arregui FJ, Claus RO. Comparative study of the modeling of three-dimensional photonic bandgap structures. J Opt Soc Am A Opt Image Sci Vis. 2003 Apr;20(4):644-54. doi: 10.1364/josaa.20.000644. PMID: 12683490.
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J Opt Soc Am A Opt Image Sci Vis. 2003 Apr;20(4):644-54. doi: 10.1364/josaa.20.000644.

Comparative study of the modeling of three-dimensional photonic bandgap structures.

Journal of the Optical Society of America. A, Optics, image science, and vision

Ignacio R Matias, Ignacio Del Villar, Francisco J Arregui, Richard O Claus

Affiliations

  1. Departamento de Ingeniería Eléctrica y Electrónica, Universidad Pública de Navarra, 31006 Pamplona, Spain. [email protected]

PMID: 12683490 DOI: 10.1364/josaa.20.000644

Abstract

A comparative study of theoretical models of different three-dimensional photonic bandgap (3D-PBG) structures has been performed, taking into account instability and convergence problems. Some rules for solving these problems and for reducing the computational time by finding symmetries in the structures are also explained. Finally, some applications produced by defects in 3D structures are shown by studying the creation of a complete bandgap in one of them and the variation of partial bandgaps in several 3D-PBG structures when several parameters of the defects, such as the number of layers stacked at each side of the defect, its thickness, and the real and imaginary parts of its index of refraction, are changed.

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