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Marian J, Knap J, Ortiz M. Nanovoid cavitation by dislocation emission in aluminum. Phys Rev Lett. 2004;93(16):165503doi: 10.1103/PhysRevLett.93.165503.
Marian, J., Knap, J., & Ortiz, M. (2004). Nanovoid cavitation by dislocation emission in aluminum. Physical review letters, 93(16), 165503. https://doi.org/10.1103/PhysRevLett.93.165503
Marian, Jaime, et al. "Nanovoid cavitation by dislocation emission in aluminum." Physical review letters vol. 93,16 (2004): 165503. doi: https://doi.org/10.1103/PhysRevLett.93.165503
Marian J, Knap J, Ortiz M. Nanovoid cavitation by dislocation emission in aluminum. Phys Rev Lett. 2004 Oct 15;93(16):165503. doi: 10.1103/PhysRevLett.93.165503. Epub 2004 Oct 14. PMID: 15525002.
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Phys Rev Lett. 2004 Oct 15;93(16):165503. doi: 10.1103/PhysRevLett.93.165503. Epub 2004 Oct 14.

Nanovoid cavitation by dislocation emission in aluminum.

Physical review letters

Jaime Marian, Jaroslaw Knap, Michael Ortiz

Affiliations

  1. Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125, USA.

PMID: 15525002 DOI: 10.1103/PhysRevLett.93.165503

Abstract

This Letter is concerned with the determination of the transition paths attendant to nanovoid growth in aluminum under hydrostatic tension. The analysis is, therefore, based on energy minimization at 0 K. Aluminum is modeled by the Ercolessi-Adams embedded-atom method, and spurious boundary artifacts are mitigated by the use of the quasicontinuum method. Our analysis reveals several stages of pressure buildup separated by yield points. The first yield point corresponds to the formation of highly stable tetrahedral dislocation junctions around the surfaces of the void. The second yield point is caused by the dissolution of the tetrahedral structures and the emission of conventional 1/2<110>[111] and anomalous 1/2<110>[001] dislocation loops.

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