Cite
Laurent S, Eble B, Krebs O, et al. Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots. Phys Rev Lett. 2005;94(14):147401doi: 10.1103/PhysRevLett.94.147401.
Laurent, S., Eble, B., Krebs, O., Lemaître, A., Urbaszek, B., Marie, X., Amand, T., & Voisin, P. (2005). Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots. Physical review letters, 94(14), 147401. https://doi.org/10.1103/PhysRevLett.94.147401
Laurent, S, et al. "Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots." Physical review letters vol. 94,14 (2005): 147401. doi: https://doi.org/10.1103/PhysRevLett.94.147401
Laurent S, Eble B, Krebs O, Lemaître A, Urbaszek B, Marie X, Amand T, Voisin P. Electrical control of hole spin relaxation in charge tunable InAs/GaAs quantum dots. Phys Rev Lett. 2005 Apr 15;94(14):147401. doi: 10.1103/PhysRevLett.94.147401. Epub 2005 Apr 12. PMID: 15904109.
Copy
Download .nbib