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Paaske J, Flensberg K. Vibrational sidebands and the Kondo effect in molecular transistors. Phys Rev Lett. 2005;94(17):176801doi: 10.1103/PhysRevLett.94.176801.
Paaske, J., & Flensberg, K. (2005). Vibrational sidebands and the Kondo effect in molecular transistors. Physical review letters, 94(17), 176801. https://doi.org/10.1103/PhysRevLett.94.176801
Paaske, Jens, and Flensberg, Karsten. "Vibrational sidebands and the Kondo effect in molecular transistors." Physical review letters vol. 94,17 (2005): 176801. doi: https://doi.org/10.1103/PhysRevLett.94.176801
Paaske J, Flensberg K. Vibrational sidebands and the Kondo effect in molecular transistors. Phys Rev Lett. 2005 May 06;94(17):176801. doi: 10.1103/PhysRevLett.94.176801. Epub 2005 May 02. PMID: 15904323.
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Phys Rev Lett. 2005 May 06;94(17):176801. doi: 10.1103/PhysRevLett.94.176801. Epub 2005 May 02.

Vibrational sidebands and the Kondo effect in molecular transistors.

Physical review letters

Jens Paaske, Karsten Flensberg

Affiliations

  1. Institut für Theorie der Kondensierten Materie, Universität Karlsruhe, 76128 Karlsruhe, Germany.

PMID: 15904323 DOI: 10.1103/PhysRevLett.94.176801

Abstract

Electron transport through molecular quantum dots coupled to a single vibrational mode is studied in the Kondo regime. We apply a generalized Schrieffer-Wolff transformation to determine the effective low-energy spin-spin-vibron interaction. From this model we calculate the nonlinear conductance and find Kondo sidebands located at bias voltages equal to multiples of the vibron frequency. Because of selection rules, the side peaks are found to have strong gate-voltage dependences, which can be tested experimentally. In the limit of weak electron-vibron coupling, we employ a perturbative renormalization group scheme to calculate analytically the nonlinear conductance.

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