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Stamou D, Musil C, Ulrich WP, et al. Site-directed molecular assembly on templates structured with electron-beam lithography. Langmuir. 2004;20(9):3495-7doi: 10.1021/la049954j.
Stamou, D., Musil, C., Ulrich, W. P., Leufgen, K., Padeste, C., David, C., Gobrecht, J., Duschl, C., & Vogel, H. (2004). Site-directed molecular assembly on templates structured with electron-beam lithography. Langmuir : the ACS journal of surfaces and colloids, 20(9), 3495-7. https://doi.org/10.1021/la049954j
Stamou, D, et al. "Site-directed molecular assembly on templates structured with electron-beam lithography." Langmuir : the ACS journal of surfaces and colloids vol. 20,9 (2004): 3495-7. doi: https://doi.org/10.1021/la049954j
Stamou D, Musil C, Ulrich WP, Leufgen K, Padeste C, David C, Gobrecht J, Duschl C, Vogel H. Site-directed molecular assembly on templates structured with electron-beam lithography. Langmuir. 2004 Apr 27;20(9):3495-7. doi: 10.1021/la049954j. PMID: 15875370.
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Langmuir. 2004 Apr 27;20(9):3495-7. doi: 10.1021/la049954j.

Site-directed molecular assembly on templates structured with electron-beam lithography.

Langmuir : the ACS journal of surfaces and colloids

D Stamou, C Musil, W P Ulrich, K Leufgen, C Padeste, C David, J Gobrecht, C Duschl, H Vogel

Affiliations

  1. Institut de Science Biomoléculaire, ISB-VO, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland. [email protected]

PMID: 15875370 DOI: 10.1021/la049954j

Abstract

We describe a simple method for patterning biomolecular films on surfaces with high resolution. A conventional polymeric resist is structured by electron-beam lithography. The exposed and developed patterns are then used for the directed self-assembly (SA) of a first molecule from solution. Removal of the remaining resist allows the SA of a second species. We illustrate the potential of the approach by assembling on gold (Au) substrates two alkanethiols of contrasting terminal functionality. The patterns have dimensions from the micrometer range down to 40 nm and an edge resolution of 3.5 nm.

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