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Phys Rev Lett. 2005 Dec 16;95(25):257401. doi: 10.1103/PhysRevLett.95.257401. Epub 2005 Dec 12.

Resonant impurity bands in semiconductor superlattices.

Physical review letters

Dominik Stehr, Claus Metzner, Manfred Helm, Tomas Roch, Gottfried Strasser

Affiliations

  1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, 01314 Dresden, Germany. [email protected]

PMID: 16384504 DOI: 10.1103/PhysRevLett.95.257401

Abstract

It is shown that the confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. Intersubband absorption experiments, which can be nearly perfectly reproduced by the theory, corroborate this interpretation, which also requires reinterpretation of previous data.

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