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Murdin BN, Litvinenko K, Clarke DG, et al. Spin relaxation by transient monopolar and bipolar optical orientation. Phys Rev Lett. 2006;96(9):096603doi: 10.1103/PhysRevLett.96.096603.
Murdin, B. N., Litvinenko, K., Clarke, D. G., Pidgeon, C. R., Murzyn, P., Phillips, P. J., Carder, D., Berden, G., Redlich, B., van der Meer, A. F., Clowes, S., Harris, J. J., Cohen, L. F., Ashley, T., & Buckle, L. (2006). Spin relaxation by transient monopolar and bipolar optical orientation. Physical review letters, 96(9), 096603. https://doi.org/10.1103/PhysRevLett.96.096603
Murdin, B N, et al. "Spin relaxation by transient monopolar and bipolar optical orientation." Physical review letters vol. 96,9 (2006): 096603. doi: https://doi.org/10.1103/PhysRevLett.96.096603
Murdin BN, Litvinenko K, Clarke DG, Pidgeon CR, Murzyn P, Phillips PJ, Carder D, Berden G, Redlich B, van der Meer AF, Clowes S, Harris JJ, Cohen LF, Ashley T, Buckle L. Spin relaxation by transient monopolar and bipolar optical orientation. Phys Rev Lett. 2006 Mar 10;96(9):096603. doi: 10.1103/PhysRevLett.96.096603. Epub 2006 Mar 10. PMID: 16606292.
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Phys Rev Lett. 2006 Mar 10;96(9):096603. doi: 10.1103/PhysRevLett.96.096603. Epub 2006 Mar 10.

Spin relaxation by transient monopolar and bipolar optical orientation.

Physical review letters

B N Murdin, K Litvinenko, D G Clarke, C R Pidgeon, P Murzyn, P J Phillips, D Carder, G Berden, B Redlich, A F G van der Meer, S Clowes, J J Harris, L F Cohen, T Ashley, L Buckle

Affiliations

  1. Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom.

PMID: 16606292 DOI: 10.1103/PhysRevLett.96.096603

Abstract

We have used two-color time-resolved spectroscopy to measure the relaxation of electron spin polarizations in a bulk semiconductor. The circularly polarized pump beam induces a polarization either by direct excitation from the valence band, or by free-carrier (Drude) absorption when tuned to an energy below the band gap. We find that the spin relaxation time, measured with picosecond time resolution by resonant induced Faraday rotation in both cases, increases in the presence of photogenerated holes. In the case of the material chosen, n-InSb, the increase was from 14 to 38 ps.

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