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Babentsov V, Riegler J, Schneider J, et al. Excitation dependence of steady-state photoluminescence in CdSe nanocrystal films. J Phys Chem B. 2005;109(32):15349-54doi: 10.1021/jp052229c.
Babentsov, V., Riegler, J., Schneider, J., Fiederle, M., & Nann, T. (2005). Excitation dependence of steady-state photoluminescence in CdSe nanocrystal films. The journal of physical chemistry. B, 109(32), 15349-54. https://doi.org/10.1021/jp052229c
Babentsov, V, et al. "Excitation dependence of steady-state photoluminescence in CdSe nanocrystal films." The journal of physical chemistry. B vol. 109,32 (2005): 15349-54. doi: https://doi.org/10.1021/jp052229c
Babentsov V, Riegler J, Schneider J, Fiederle M, Nann T. Excitation dependence of steady-state photoluminescence in CdSe nanocrystal films. J Phys Chem B. 2005 Aug 18;109(32):15349-54. doi: 10.1021/jp052229c. PMID: 16852947.
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J Phys Chem B. 2005 Aug 18;109(32):15349-54. doi: 10.1021/jp052229c.

Excitation dependence of steady-state photoluminescence in CdSe nanocrystal films.

The journal of physical chemistry. B

V Babentsov, J Riegler, J Schneider, M Fiederle, T Nann

Affiliations

  1. Freiburger Materialforschungszentrum, Albert-Ludwigs-Universität Freiburg, Stefan-Meier-Strasse 21, D-79104 Freiburg, Germany.

PMID: 16852947 DOI: 10.1021/jp052229c

Abstract

The excitonic and deep-level photoluminescence (PL) in CdSe nanocrystal (NC) films (wurtzite type) was studied under continuous-wave excitation as a function of excitation power, temperature, and time of photoaging. It was shown that the intensity-power dependencies are identical for excitonic and deep-level emissions in a wide temperature range. At low temperatures (80-100 K), both emissions were saturated at the laser power used, which generates more than one exciton per nanocrystal. A transition point from the linear to the saturated region was dependent on the temperature, size, and quality of the NCs. A clear inverse dependency between the intensities of excitonic and deep-level emissions was revealed at 80 K over the entire sample area. At room-temperature, the quantum yield dropped significantly and a higher laser power was needed to reach PL saturation. An increase in temperature led to worsening of the reverse dependence between excitonic and deep-level emissions, and at room-temperature, they became uncorrelated. These results can be explained by Auger recombination and also by an increase of nonradiative recombination in the surface states with increasing temperature.

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