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Phys Rev Lett. 2006 Nov 17;97(20):206801. doi: 10.1103/PhysRevLett.97.206801. Epub 2006 Nov 13.

Electron transport via local polarons at interface atoms.

Physical review letters

M Berthe, A Urbieta, L Perdigão, B Grandidier, D Deresmes, C Delerue, D Stiévenard, R Rurali, N Lorente, L Magaud, P Ordejón

Affiliations

  1. Institut d'Electronique, de Microélectronique, et de Nanotechnologie, IEMN ,CNRS, UMR 8520, Département ISEN, 59046 Lille Cédex, France.

PMID: 17155701 DOI: 10.1103/PhysRevLett.97.206801

Abstract

Electronic transport is profoundly modified in the presence of strong electron-vibration coupling. We show that in certain situations, the electron flow takes place only when vibrations are excited. By controlling the segregation of boron in semiconducting Si(111)-square root 3 x square root 3 R 30 degrees surfaces, we create a type of adatom with a dangling-bond state that is electronically decoupled from any other electronic state. However, probing this state with scanning tunnelling microscopy at 5 K yields high currents. These findings are rationalized by ab-initio calculations that show the formation of a local polaron in the transport process.

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