Display options
Cite
Weber WM, Geelhaar L, Graham AP, et al. Silicon-nanowire transistors with intruded nickel-silicide contacts. Nano Lett. 2006;6(12):2660-6doi: 10.1021/nl0613858.
Weber, W. M., Geelhaar, L., Graham, A. P., Unger, E., Duesberg, G. S., Liebau, M., Pamler, W., Chèze, C., Riechert, H., Lugli, P., & Kreupl, F. (2006). Silicon-nanowire transistors with intruded nickel-silicide contacts. Nano letters, 6(12), 2660-6. https://doi.org/10.1021/nl0613858
Weber, Walter M, et al. "Silicon-nanowire transistors with intruded nickel-silicide contacts." Nano letters vol. 6,12 (2006): 2660-6. doi: https://doi.org/10.1021/nl0613858
Weber WM, Geelhaar L, Graham AP, Unger E, Duesberg GS, Liebau M, Pamler W, Chèze C, Riechert H, Lugli P, Kreupl F. Silicon-nanowire transistors with intruded nickel-silicide contacts. Nano Lett. 2006 Dec;6(12):2660-6. doi: 10.1021/nl0613858. PMID: 17163684.
Copy Download .nbib Format: NLM
Share it on

Nano Lett. 2006 Dec;6(12):2660-6. doi: 10.1021/nl0613858.

Silicon-nanowire transistors with intruded nickel-silicide contacts.

Nano letters

Walter M Weber, Lutz Geelhaar, Andrew P Graham, Eugen Unger, Georg S Duesberg, Maik Liebau, Werner Pamler, Caroline Chèze, Henning Riechert, Paolo Lugli, Franz Kreupl

Affiliations

  1. Qimonda Dresden GmbH & Co., Technology Center, D-01099 Dresden, Germany. [email protected]

PMID: 17163684 DOI: 10.1021/nl0613858

Abstract

Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 10(7). The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 microm, and decreased exponentially for gate lengths exceeding 1 microm.

Publication Types