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Sköld N, Wagner JB, Karlsson G, et al. Phase segregation in AlInP shells on GaAs nanowires. Nano Lett. 2006;6(12):2743-7doi: 10.1021/nl061692d.
Sköld, N., Wagner, J. B., Karlsson, G., Hernán, T., Seifert, W., Pistol, M. E., & Samuelson, L. (2006). Phase segregation in AlInP shells on GaAs nanowires. Nano letters, 6(12), 2743-7. https://doi.org/10.1021/nl061692d
Sköld, Niklas, et al. "Phase segregation in AlInP shells on GaAs nanowires." Nano letters vol. 6,12 (2006): 2743-7. doi: https://doi.org/10.1021/nl061692d
Sköld N, Wagner JB, Karlsson G, Hernán T, Seifert W, Pistol ME, Samuelson L. Phase segregation in AlInP shells on GaAs nanowires. Nano Lett. 2006 Dec;6(12):2743-7. doi: 10.1021/nl061692d. PMID: 17163698.
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Nano Lett. 2006 Dec;6(12):2743-7. doi: 10.1021/nl061692d.

Phase segregation in AlInP shells on GaAs nanowires.

Nano letters

Niklas Sköld, Jakob B Wagner, Gunnel Karlsson, Tania Hernán, Werner Seifert, Mats-Erik Pistol, Lars Samuelson

Affiliations

  1. Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden.

PMID: 17163698 DOI: 10.1021/nl061692d

Abstract

We have studied morphology and phase segregation of AlInP shells on GaAs nanowires. Photoluminescence measurements on single core-shell nanowires indicated variations in the shell composition, and phase segregation was confirmed by cross-sectional scanning transmission electron microscopy on 30 nm thin slices of the wires. It was discovered that Al-rich domains form in the <112> directions where two {110} shell facets meet during growth. We propose that the mechanism behind this phase segregation is a variation in the chemical potential along the circumference of the nanowire together with a difference in diffusion lengths for the different growth species. From the morphology of the core and the shell, we conclude that the side facet growth is temperature dependent forming {112}facets at low growth temperature and {110} facets at high growth temperature.

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