Display options
Cite
Hegarty SP, Huyet G, Porta P, et al. Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime. Opt Lett. 1998;23(15):1206-8doi: 10.1364/ol.23.001206.
Hegarty, S. P., Huyet, G., Porta, P., & McInerney, J. G. (1998). Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime. Optics letters, 23(15), 1206-8. https://doi.org/10.1364/ol.23.001206
Hegarty, S P, et al. "Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime." Optics letters vol. 23,15 (1998): 1206-8. doi: https://doi.org/10.1364/ol.23.001206
Hegarty SP, Huyet G, Porta P, McInerney JG. Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime. Opt Lett. 1998 Aug 01;23(15):1206-8. doi: 10.1364/ol.23.001206. PMID: 18087475.
Copy Download .nbib Format: NLM
Share it on

Opt Lett. 1998 Aug 01;23(15):1206-8. doi: 10.1364/ol.23.001206.

Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime.

Optics letters

S P Hegarty, G Huyet, P Porta, J G McInerney

Affiliations

  1. Department of Physics, National University of Ireland, University College, Cork, Ireland.

PMID: 18087475 DOI: 10.1364/ol.23.001206

Abstract

We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser.

Publication Types