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Ivira B, Benech P, Fillit R, et al. Modeling for temperature compensation and temperature characterizations of BAW resonators at GHz frequencies. IEEE Trans Ultrason Ferroelectr Freq Control. 2008;55(2):421-30doi: 10.1109/TUFFC.2008.660.
Ivira, B., Benech, P., Fillit, R., Ndagijimana, F., Ancey, P., & Parat, G. (2008). Modeling for temperature compensation and temperature characterizations of BAW resonators at GHz frequencies. IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 55(2), 421-30. https://doi.org/10.1109/TUFFC.2008.660
Ivira, Brice, et al. "Modeling for temperature compensation and temperature characterizations of BAW resonators at GHz frequencies." IEEE transactions on ultrasonics, ferroelectrics, and frequency control vol. 55,2 (2008): 421-30. doi: https://doi.org/10.1109/TUFFC.2008.660
Ivira B, Benech P, Fillit R, Ndagijimana F, Ancey P, Parat G. Modeling for temperature compensation and temperature characterizations of BAW resonators at GHz frequencies. IEEE Trans Ultrason Ferroelectr Freq Control. 2008 Feb;55(2):421-30. doi: 10.1109/TUFFC.2008.660. PMID: 18334348.
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IEEE Trans Ultrason Ferroelectr Freq Control. 2008 Feb;55(2):421-30. doi: 10.1109/TUFFC.2008.660.

Modeling for temperature compensation and temperature characterizations of BAW resonators at GHz frequencies.

IEEE transactions on ultrasonics, ferroelectrics, and frequency control

Brice Ivira, Phippippe Benech, René Fillit, Fabien Ndagijimana, Pascal Ancey, Guy Parat

Affiliations

  1. Institute of Microelectonics, Electromagnetism and Photonics, INPG/UJF, CNRS, Grenoble, France. [email protected]

PMID: 18334348 DOI: 10.1109/TUFFC.2008.660

Abstract

This paper deals with the temperature dependence of electrical and physical features of various kinds of solidly mounted resonators (SMR). The presented bulk acoustic wave (BAW) devices are designed for the 2 GHz application. The temperature coefficient of frequency (TCF) is determined from measurements well above the temperature range defined for wireless telecommunication system specifications. Therefore, evolution of electromechanical coupling factors and quality factors at resonance and antiresonance are also monitored. Results of characterizations show the trend for a subsequent theoretical temperature compensation study by using analytical modeling. To improve accuracy of modeling, an attempt to extract temperature dependence of dielectric permittivity epsilon(33) and piezoelectric coefficient e(33) is made. Finally, a well-known analytical model is modified to take into account the temperature dependence of length, density, stiffness coefficient, dielectric permittivity, and piezoelectric coefficient. Modeling highlights the need to deposit a material with positive temperature coefficient of stiffness on the top electrode. Realistic thickness of such a layer is determined. At the same time, it is necessary to adjust piezoelectric and electrode thin film thicknesses for simultaneously keeping a constant antiresonance frequency, reaching a zero temperature coefficient of frequency for antiresonance, and minimizing the decrease in the coupling factor because of the mass-loading deposition.

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