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Gao ZQ, Mi BX, Xu GZ, et al. An organic p-type dopant with high thermal stability for an organic semiconductor. Chem Commun (Camb). 2008;(1):117-9doi: 10.1039/b713566a.
Gao, Z. Q., Mi, B. X., Xu, G. Z., Wan, Y. Q., Gong, M. L., Cheah, K. W., & Chen, C. H. (2008). An organic p-type dopant with high thermal stability for an organic semiconductor. Chemical communications (Cambridge, England), (1), 117-9. https://doi.org/10.1039/b713566a
Gao, Zhi Qiang, et al. "An organic p-type dopant with high thermal stability for an organic semiconductor." Chemical communications (Cambridge, England) vol. ,1 (2008): 117-9. doi: https://doi.org/10.1039/b713566a
Gao ZQ, Mi BX, Xu GZ, Wan YQ, Gong ML, Cheah KW, Chen CH. An organic p-type dopant with high thermal stability for an organic semiconductor. Chem Commun (Camb). 2008 Jan 07;(1):117-9. doi: 10.1039/b713566a. PMID: 18399419.
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Chem Commun (Camb). 2008 Jan 07;(1):117-9. doi: 10.1039/b713566a.

An organic p-type dopant with high thermal stability for an organic semiconductor.

Chemical communications (Cambridge, England)

Zhi Qiang Gao, Bao Xiu Mi, Gui Zhen Xu, Yi Qian Wan, Meng Lian Gong, Kok Wai Cheah, Chin H Chen

Affiliations

  1. Centre for Advanced Luminescence Materials, Hong Kong Baptist University, Kowloon, Hong Kong, P. R. China.

PMID: 18399419 DOI: 10.1039/b713566a

Abstract

To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.

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