Display options
Share it on

Microsc Microanal. 2008 Oct;14(5):439-50. doi: 10.1017/S1431927608080719.

Use of Monte Carlo modeling to aid interpretation and quantification of the low energy-loss electron yield at low primary energies.

Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada

Christopher Bonet, Andrew Pratt, Mohamed M El-Gomati, Jim A D Matthew, Steven P Tear

Affiliations

  1. Department of Physics, University of York, Heslington, York YO10 5DD, UK.

PMID: 18793488 DOI: 10.1017/S1431927608080719

Abstract

Experimental low-loss electron (LLE) yields were measured as a function of loss energy for a range of elemental standards using a high-vacuum scanning electron microscope operating at 5 keV primary beam energy with losses from 0 to 1 keV. The resulting LLE yield curves were compared with Monte Carlo simulations of the LLE yield in the particular beam/sample/detector geometry employed in the experiment to investigate the possibility of modeling the LLE yield for a series of elements. Monte Carlo simulations were performed using both the Joy and Luo [Joy, D.C. & Luo, S., Scanning 11(4), 176988 (2005)] to assess the influence of the more recent stopping power data on the simulation results. Further simulations have been conducted to explore the influence of sample/detector geometry on the LLE signal in the case of layered samples consisting of a thin C overlayer on an elemental substrate. Experimental LLE data were collected from a range of elemental samples coated with a thin C overlayer, and comparisons with Monte Carlo simulations were used to establish the overlayer thickness.

Publication Types