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King PD, Veal TD, Payne DJ, et al. Surface electron accumulation and the charge neutrality level in In2O3. Phys Rev Lett. 2008;101(11):116808doi: 10.1103/PhysRevLett.101.116808.
King, P. D., Veal, T. D., Payne, D. J., Bourlange, A., Egdell, R. G., & McConville, C. F. (2008). Surface electron accumulation and the charge neutrality level in In2O3. Physical review letters, 101(11), 116808. https://doi.org/10.1103/PhysRevLett.101.116808
King, P D C, et al. "Surface electron accumulation and the charge neutrality level in In2O3." Physical review letters vol. 101,11 (2008): 116808. doi: https://doi.org/10.1103/PhysRevLett.101.116808
King PD, Veal TD, Payne DJ, Bourlange A, Egdell RG, McConville CF. Surface electron accumulation and the charge neutrality level in In2O3. Phys Rev Lett. 2008 Sep 12;101(11):116808. doi: 10.1103/PhysRevLett.101.116808. Epub 2008 Sep 11. PMID: 18851315.
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Phys Rev Lett. 2008 Sep 12;101(11):116808. doi: 10.1103/PhysRevLett.101.116808. Epub 2008 Sep 11.

Surface electron accumulation and the charge neutrality level in In2O3.

Physical review letters

P D C King, T D Veal, D J Payne, A Bourlange, R G Egdell, C F McConville

Affiliations

  1. Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom.

PMID: 18851315 DOI: 10.1103/PhysRevLett.101.116808

Abstract

High-resolution x-ray photoemission spectroscopy, infrared reflectivity and Hall effect measurements, combined with surface space-charge calculations, are used to show that electron accumulation occurs at the surface of undoped single-crystalline In2O3. From a combination of measurements performed on undoped and heavily Sn-doped samples, the charge neutrality level is shown to lie approximately 0.4 eV above the conduction band minimum in In2O3, explaining the electron accumulation at the surface of undoped material, the propensity for n-type conductivity, and the ease of n-type doping in In2O3, and hence its use as a transparent conducting oxide material.

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