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Phys Rev Lett. 2008 Oct 17;101(16):163203. doi: 10.1103/PhysRevLett.101.163203. Epub 2008 Oct 17.

Contribution of drifting carriers to the Casimir-Lifshitz and Casimir-Polder interactions with semiconductor materials.

Physical review letters

Diego A R Dalvit, Steve K Lamoreaux

Affiliations

  1. Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.

PMID: 18999666 DOI: 10.1103/PhysRevLett.101.163203

Abstract

We develop a theory for Casimir-Lifshitz and Casimir-Polder interactions with semiconductor or insulator surfaces that takes into account charge drift in the bulk material through use of the classical Boltzmann equation. We derive frequency-dependent dispersion relations that give the usual Lifshitz results for dielectrics as a limiting case and, in the quasistatic limit, coincide with those recently computed to account for Debye screening in the thermal Lifshitz force with conducting surfaces with small density of carriers.

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