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Dick KA, Deppert K, Samuelson L, et al. Control of GaP and GaAs nanowire morphology through particle and substrate chemical modification. Nano Lett. 2008;8(11):4087-91doi: 10.1021/nl8027153.
Dick, K. A., Deppert, K., Samuelson, L., Wallenberg, L. R., & Ross, F. M. (2008). Control of GaP and GaAs nanowire morphology through particle and substrate chemical modification. Nano letters, 8(11), 4087-91. https://doi.org/10.1021/nl8027153
Dick, Kimberly A, et al. "Control of GaP and GaAs nanowire morphology through particle and substrate chemical modification." Nano letters vol. 8,11 (2008): 4087-91. doi: https://doi.org/10.1021/nl8027153
Dick KA, Deppert K, Samuelson L, Wallenberg LR, Ross FM. Control of GaP and GaAs nanowire morphology through particle and substrate chemical modification. Nano Lett. 2008 Nov;8(11):4087-91. doi: 10.1021/nl8027153. Epub 2008 Oct 24. PMID: 18947257.
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Nano Lett. 2008 Nov;8(11):4087-91. doi: 10.1021/nl8027153. Epub 2008 Oct 24.

Control of GaP and GaAs nanowire morphology through particle and substrate chemical modification.

Nano letters

Kimberly A Dick, Knut Deppert, Lars Samuelson, L Reine Wallenberg, Frances M Ross

Affiliations

  1. Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden. [email protected]

PMID: 18947257 DOI: 10.1021/nl8027153

Abstract

We demonstrate two very different morphologies for GaP and GaAs nanowires grown by Au-assisted MOVPE on Si(111) substrates: rodlike wires and tapered wires with sharp tips. We show that the morphology is related to the stability of the particles at the wire tips during growth, and we propose that the mechanism of this effect is diffusion of Au away from the tip. Diffusion occurs, leading to tapered wires, only if there is a clean Si surface to act as a reservoir for the Au. Furthermore, the presence of indium in the particles, even at background levels from previous growth runs, inhibits the migration of Au. These results demonstrate a dramatic example of the sensitivity of wire morphology to substrate and particle chemistry, which could provide an important tool to tune nanowire morphology through particle alloying or surface treatment.

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