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Kliner DA, Koplow JP, Goldberg L. Narrow-band, tunable, semiconductor-laser-based source for deep-UV absorption spectroscopy. Opt Lett. 1997;22(18):1418-20doi: 10.1364/ol.22.001418.
Kliner, D. A., Koplow, J. P., & Goldberg, L. (1997). Narrow-band, tunable, semiconductor-laser-based source for deep-UV absorption spectroscopy. Optics letters, 22(18), 1418-20. https://doi.org/10.1364/ol.22.001418
Kliner, D A, et al. "Narrow-band, tunable, semiconductor-laser-based source for deep-UV absorption spectroscopy." Optics letters vol. 22,18 (1997): 1418-20. doi: https://doi.org/10.1364/ol.22.001418
Kliner DA, Koplow JP, Goldberg L. Narrow-band, tunable, semiconductor-laser-based source for deep-UV absorption spectroscopy. Opt Lett. 1997 Sep 15;22(18):1418-20. doi: 10.1364/ol.22.001418. PMID: 18188256.
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Opt Lett. 1997 Sep 15;22(18):1418-20. doi: 10.1364/ol.22.001418.

Narrow-band, tunable, semiconductor-laser-based source for deep-UV absorption spectroscopy.

Optics letters

D A Kliner, J P Koplow, L Goldberg

PMID: 18188256 DOI: 10.1364/ol.22.001418

Abstract

Tunable, narrow-bandwidth (<200-MHz), ~215-nm radiation was produced by frequency quadrupling the ~860-nm output of a high-power, pulsed GaAlAs tapered amplifier seeded by an external-cavity diode laser. Pulsing the amplifier increased the 860 nm?215 nm conversion efficiency by 2 orders of magnitude with respect to cw operation. Detection of nitric oxide and sulfur dioxide by high-resolution absorption spectroscopy was demonstrated.

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