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Barenz J, Eska A, Hollricher O, et al. Near-field luminescence measurements on GaInAsP/InP double heterostructures at room temperature. Appl Opt. 1998;37(1):106-12doi: 10.1364/ao.37.000106.
Barenz, J., Eska, A., Hollricher, O., Marti, O., Wachter, M., Schöffel, U., & Heinecke, H. (1998). Near-field luminescence measurements on GaInAsP/InP double heterostructures at room temperature. Applied optics, 37(1), 106-12. https://doi.org/10.1364/ao.37.000106
Barenz, J, et al. "Near-field luminescence measurements on GaInAsP/InP double heterostructures at room temperature." Applied optics vol. 37,1 (1998): 106-12. doi: https://doi.org/10.1364/ao.37.000106
Barenz J, Eska A, Hollricher O, Marti O, Wachter M, Schöffel U, Heinecke H. Near-field luminescence measurements on GaInAsP/InP double heterostructures at room temperature. Appl Opt. 1998 Jan 01;37(1):106-12. doi: 10.1364/ao.37.000106. PMID: 18268567.
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Appl Opt. 1998 Jan 01;37(1):106-12. doi: 10.1364/ao.37.000106.

Near-field luminescence measurements on GaInAsP/InP double heterostructures at room temperature.

Applied optics

J Barenz, A Eska, O Hollricher, O Marti, M Wachter, U Schöffel, H Heinecke

Affiliations

  1. Department of Experimental Physics, University of Ulm, D-89069 Ulm/Donau, Germany.

PMID: 18268567 DOI: 10.1364/ao.37.000106

Abstract

Spatially resolved near-field luminescence spectroscopy was carried out on locally grown InP ridges, overgrown by a GaInAsP layer in metal organic molecular beam epitaxy. For free access to the quaternary layer the cleaved surface was investigated. Two different reflection scanning near-field microscopy setups were used. In the illumination mode we were able to estimate the charge-carrier diffusion in the InP. For improving the spatial resolution, measurements were also carried out in the collection mode. Here a shift of the center wavelength toward lower energy occurs near the side facets. This can be a result of a material composition gradient or of strained growth near the side facets. A second recombination channel at 1115 nm occurs at the growth-nongrowth transition. With the simultaneous recorded topography this recombination channel can be localized in the quaternary layer grown on the side of the InP ridge.

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