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Song YW, Kim K, Ahn JP, et al. Physically processed Ag-doped ZnO nanowires for all-ZnO p-n diodes. Nanotechnology. 2009;20(27):275606doi: 10.1088/0957-4484/20/27/275606.
Song, Y. W., Kim, K., Ahn, J. P., Jang, G. E., & Lee, S. Y. (2009). Physically processed Ag-doped ZnO nanowires for all-ZnO p-n diodes. Nanotechnology, 20(27), 275606. https://doi.org/10.1088/0957-4484/20/27/275606
Song, Yong-Won, et al. "Physically processed Ag-doped ZnO nanowires for all-ZnO p-n diodes." Nanotechnology vol. 20,27 (2009): 275606. doi: https://doi.org/10.1088/0957-4484/20/27/275606
Song YW, Kim K, Ahn JP, Jang GE, Lee SY. Physically processed Ag-doped ZnO nanowires for all-ZnO p-n diodes. Nanotechnology. 2009 Jul 08;20(27):275606. doi: 10.1088/0957-4484/20/27/275606. Epub 2009 Jun 17. PMID: 19531858.
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Nanotechnology. 2009 Jul 08;20(27):275606. doi: 10.1088/0957-4484/20/27/275606. Epub 2009 Jun 17.

Physically processed Ag-doped ZnO nanowires for all-ZnO p-n diodes.

Nanotechnology

Yong-Won Song, Kyoungwon Kim, Jae Pyoung Ahn, Gun-Eik Jang, Sang Yeol Lee

Affiliations

  1. Center for Energy Materials Research, Korea Institute of Science and Technology, Seoul 136-791, Korea.

PMID: 19531858 DOI: 10.1088/0957-4484/20/27/275606

Abstract

We synthesize and analyze Ag-doped ZnO (SZO) nanowires (NWs) via a vapor-liquid-solid mechanism in a physical vapor deposition. The process condition for the SZO NW formation is optimized by adjusting the kinetic energy and the flux of the laser-ablated particles by hot-wall control. Electron microscopes ensure excellent morphologies of the doped NWs obtained. We confirm p-type doping effects, with low temperature photoluminescence used to trace the A(0)X peak. We realize diodes with all-ZnO-based p-n junctions of SZO NWs and Ga-doped ZnO thin films, resulting in asymmetric I-V characteristics with the turn on voltage of 3.8 V.

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