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Levichev S, Mamor M, Rolo AG, et al. Electrical conduction of CdSe nanocrystals embedded in silicon oxide films. J Nanosci Nanotechnol. 2009;9(6):3418-23doi: 10.1166/jnn.2009.ns11.
Levichev, S., Mamor, M., Rolo, A. G., Pinto, S. R., Khodorov, A., & Gomes, M. J. (2009). Electrical conduction of CdSe nanocrystals embedded in silicon oxide films. Journal of nanoscience and nanotechnology, 9(6), 3418-23. https://doi.org/10.1166/jnn.2009.ns11
Levichev, S, et al. "Electrical conduction of CdSe nanocrystals embedded in silicon oxide films." Journal of nanoscience and nanotechnology vol. 9,6 (2009): 3418-23. doi: https://doi.org/10.1166/jnn.2009.ns11
Levichev S, Mamor M, Rolo AG, Pinto SR, Khodorov A, Gomes MJ. Electrical conduction of CdSe nanocrystals embedded in silicon oxide films. J Nanosci Nanotechnol. 2009 Jun;9(6):3418-23. doi: 10.1166/jnn.2009.ns11. PMID: 19504863.
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J Nanosci Nanotechnol. 2009 Jun;9(6):3418-23. doi: 10.1166/jnn.2009.ns11.

Electrical conduction of CdSe nanocrystals embedded in silicon oxide films.

Journal of nanoscience and nanotechnology

S Levichev, M Mamor, A G Rolo, S R C Pinto, A Khodorov, M J M Gomes

Affiliations

  1. Physics Department, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.

PMID: 19504863 DOI: 10.1166/jnn.2009.ns11

Abstract

In this paper we report on the structural, optical and electrical properties of CdSe nanocrystals (NCs) embedded in silica matrix grown by the rf-magnetron sputtering technique with subsequent annealing under argon flux. Grazing incidence X-ray diffraction (GIXD), Photoluminescence (PL) and Raman spectroscopy, as well as current-voltage (I-V) measurements were used to characterize the CdSe NCs. The PL spectra of annealed samples demonstrate the presence of peaks in the range of 550-620 nm, indicating the quantum confinement effect in CdSe NCs. This quantum confinement effect in CdSe NCs was also confirmed by Raman spectroscopy. Finally, I-V behavior was explained by different concentrations and sizes of CdSe NCs.

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