Display options
Cite
Nacci C, Fölsch S, Zenichowski K, et al. Current versus temperature-induced switching in a single-molecule tunnel junction: 1,5 cyclooctadiene on Si(001). Nano Lett. 2009;9(8):2996-3000doi: 10.1021/nl901419g.
Nacci, C., Fölsch, S., Zenichowski, K., Dokić, J., Klamroth, T., & Saalfrank, P. (2009). Current versus temperature-induced switching in a single-molecule tunnel junction: 1,5 cyclooctadiene on Si(001). Nano letters, 9(8), 2996-3000. https://doi.org/10.1021/nl901419g
Nacci, Christophe, et al. "Current versus temperature-induced switching in a single-molecule tunnel junction: 1,5 cyclooctadiene on Si(001)." Nano letters vol. 9,8 (2009): 2996-3000. doi: https://doi.org/10.1021/nl901419g
Nacci C, Fölsch S, Zenichowski K, Dokić J, Klamroth T, Saalfrank P. Current versus temperature-induced switching in a single-molecule tunnel junction: 1,5 cyclooctadiene on Si(001). Nano Lett. 2009 Aug;9(8):2996-3000. doi: 10.1021/nl901419g. PMID: 19583246.
Copy Download .nbib Format: NLM
Share it on

Nano Lett. 2009 Aug;9(8):2996-3000. doi: 10.1021/nl901419g.

Current versus temperature-induced switching in a single-molecule tunnel junction: 1,5 cyclooctadiene on Si(001).

Nano letters

Christophe Nacci, Stefan Fölsch, Karl Zenichowski, Jadranka Dokić, Tillmann Klamroth, Peter Saalfrank

Affiliations

  1. Paul-Drude-Institut für Festkörperelektronik, D-10117 Berlin, Germany.

PMID: 19583246 DOI: 10.1021/nl901419g

Abstract

The biconformational switching of single cyclooctadiene molecules chemisorbed on a Si(001) surface was explored by quantum chemical and quantum dynamical calculations and low-temperature scanning tunneling microscopy experiments. The calculations rationalize the experimentally observed switching driven by inelastic electron tunneling (IET) at 5 K. At higher temperatures, they predict a controllable crossover behavior between IET-driven and thermally activated switching, which is fully confirmed by experiment.

Publication Types