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Subramanian A, Alt AR, Dong L, et al. Electrostatic actuation and electromechanical switching behavior of one-dimensional nanostructures. ACS Nano. 2009;3(10):2953-64doi: 10.1021/nn900436x.
Subramanian, A., Alt, A. R., Dong, L., Kratochvil, B. E., Bolognesi, C. R., & Nelson, B. J. (2009). Electrostatic actuation and electromechanical switching behavior of one-dimensional nanostructures. ACS nano, 3(10), 2953-64. https://doi.org/10.1021/nn900436x
Subramanian, Arunkumar, et al. "Electrostatic actuation and electromechanical switching behavior of one-dimensional nanostructures." ACS nano vol. 3,10 (2009): 2953-64. doi: https://doi.org/10.1021/nn900436x
Subramanian A, Alt AR, Dong L, Kratochvil BE, Bolognesi CR, Nelson BJ. Electrostatic actuation and electromechanical switching behavior of one-dimensional nanostructures. ACS Nano. 2009 Oct 27;3(10):2953-64. doi: 10.1021/nn900436x. PMID: 19739601.
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ACS Nano. 2009 Oct 27;3(10):2953-64. doi: 10.1021/nn900436x.

Electrostatic actuation and electromechanical switching behavior of one-dimensional nanostructures.

ACS nano

Arunkumar Subramanian, Andreas R Alt, Lixin Dong, Bradley E Kratochvil, Colombo R Bolognesi, Bradley J Nelson

Affiliations

  1. Institute of Robotics and Intelligent Systems, ETH Zurich, 8092 Zurich, Switzerland. [email protected]

PMID: 19739601 DOI: 10.1021/nn900436x

Abstract

We report on the electromechanical actuation and switching performance of nanoconstructs involving doubly clamped, individual multiwalled carbon nanotubes. Batch-fabricated, three-state switches with low ON-state voltages (6.7 V average) are demonstrated. A nanoassembly architecture that permits individual probing of one device at a time without crosstalk from other nanotubes, which are originally assembled in parallel, is presented. Experimental investigations into device performance metrics such as hysteresis, repeatability and failure modes are presented. Furthermore, current-driven shell etching is demonstrated as a tool to tune the nanomechanical clamping configuration, stiffness, and actuation voltage of fabricated devices. Computational models, which take into account the nonlinearities induced by stress-stiffening of 1-D nanowires at large deformations, are presented. Apart from providing accurate estimates of device performance, these models provide new insights into the extension of stable travel range in electrostatically actuated nanowire-based constructs as compared to their microscale counterparts.

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