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Goldberg L, Kliner DA. Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser. Opt Lett. 1995;20(10):1145-7doi: 10.1364/ol.20.001145.
Goldberg, L., & Kliner, D. A. (1995). Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser. Optics letters, 20(10), 1145-7. https://doi.org/10.1364/ol.20.001145
Goldberg, L, and Kliner, D A. "Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser." Optics letters vol. 20,10 (1995): 1145-7. doi: https://doi.org/10.1364/ol.20.001145
Goldberg L, Kliner DA. Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser. Opt Lett. 1995 May 15;20(10):1145-7. doi: 10.1364/ol.20.001145. PMID: 19859453.
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Opt Lett. 1995 May 15;20(10):1145-7. doi: 10.1364/ol.20.001145.

Deep-UV generation by frequency quadrupling of a high-power GaAlAs semiconductor laser.

Optics letters

L Goldberg, D A Kliner

PMID: 19859453 DOI: 10.1364/ol.20.001145

Abstract

Tunable UV radiation near 215 nm was produced by frequency quadrupling the 860-nm emission of a mode-locked external-cavity compound semiconductor laser containing a tapered GaAlAs amplifier. A KNbO(3) crystal generated the 430-nm second harmonic, which was doubled by a beta-BaB(2)O(4) crystal, producing tunable UV radiation with as much as 15 microW of average power.

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