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Debray P, Rahman SM, Wan J, et al. All-electric quantum point contact spin-polarizer. Nat Nanotechnol. 2009;4(11):759-64doi: 10.1038/nnano.2009.240.
Debray, P., Rahman, S. M., Wan, J., Newrock, R. S., Cahay, M., Ngo, A. T., Ulloa, S. E., Herbert, S. T., Muhammad, M., & Johnson, M. (2009). All-electric quantum point contact spin-polarizer. Nature nanotechnology, 4(11), 759-64. https://doi.org/10.1038/nnano.2009.240
Debray, P, et al. "All-electric quantum point contact spin-polarizer." Nature nanotechnology vol. 4,11 (2009): 759-64. doi: https://doi.org/10.1038/nnano.2009.240
Debray P, Rahman SM, Wan J, Newrock RS, Cahay M, Ngo AT, Ulloa SE, Herbert ST, Muhammad M, Johnson M. All-electric quantum point contact spin-polarizer. Nat Nanotechnol. 2009 Nov;4(11):759-64. doi: 10.1038/nnano.2009.240. Epub 2009 Sep 06. PMID: 19893512.
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Nat Nanotechnol. 2009 Nov;4(11):759-64. doi: 10.1038/nnano.2009.240. Epub 2009 Sep 06.

All-electric quantum point contact spin-polarizer.

Nature nanotechnology

P Debray, S M S Rahman, J Wan, R S Newrock, M Cahay, A T Ngo, S E Ulloa, S T Herbert, M Muhammad, M Johnson

Affiliations

  1. Department of Physics, University of Cincinnati, Cincinnati, OH 45221, USA. [email protected]

PMID: 19893512 DOI: 10.1038/nnano.2009.240

Abstract

The controlled creation, manipulation and detection of spin-polarized currents by purely electrical means remains a central challenge of spintronics. Efforts to meet this challenge by exploiting the coupling of the electron orbital motion to its spin, in particular Rashba spin-orbit coupling, have so far been unsuccessful. Recently, it has been shown theoretically that the confining potential of a small current-carrying wire with high intrinsic spin-orbit coupling leads to the accumulation of opposite spins at opposite edges of the wire, though not to a spin-polarized current. Here, we present experimental evidence that a quantum point contact -- a short wire -- made from a semiconductor with high intrinsic spin-orbit coupling can generate a completely spin-polarized current when its lateral confinement is made highly asymmetric. By avoiding the use of ferromagnetic contacts or external magnetic fields, such quantum point contacts may make feasible the development of a variety of semiconductor spintronic devices.

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