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de Boor J, Geyer N, Wittemann JV, et al. Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching. Nanotechnology. 2010;21(9):095302doi: 10.1088/0957-4484/21/9/095302.
de Boor, J., Geyer, N., Wittemann, J. V., Gösele, U., & Schmidt, V. (2010). Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching. Nanotechnology, 21(9), 095302. https://doi.org/10.1088/0957-4484/21/9/095302
de Boor, Johannes, et al. "Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching." Nanotechnology vol. 21,9 (2010): 095302. doi: https://doi.org/10.1088/0957-4484/21/9/095302
de Boor J, Geyer N, Wittemann JV, Gösele U, Schmidt V. Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching. Nanotechnology. 2010 Mar 05;21(9):095302. doi: 10.1088/0957-4484/21/9/095302. Epub 2010 Jan 29. PMID: 20110585.
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Nanotechnology. 2010 Mar 05;21(9):095302. doi: 10.1088/0957-4484/21/9/095302. Epub 2010 Jan 29.

Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching.

Nanotechnology

Johannes de Boor, Nadine Geyer, Jörg V Wittemann, Ulrich Gösele, Volker Schmidt

Affiliations

  1. Max Planck Institute of Microstructure Physics, Halle, Germany. [email protected]

PMID: 20110585 DOI: 10.1088/0957-4484/21/9/095302

Abstract

By combining laser interference lithography and metal-assisted etching we were able to produce arrays of silicon nanowires with uniform diameters as small as 65 nm and densities exceeding 2 x 10(7) mm(-2). The wires are single crystalline, vertically aligned, arranged in a square pattern and obey strict periodicity over several cm(2). The applied technique allows for a tailoring of nanowire size and density. Using a controlled and scalable process to fabricate sub-100 nm silicon nanowires is an important step towards the realization of cost-effective electronic and thermoelectric devices.

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