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Gawrys P, Djurado D, Rimarcík J, et al. Effect of N-substituents on redox, optical, and electronic properties of naphthalene bisimides used for field-effect transistors fabrication. J Phys Chem B. 2010;114(5):1803-9doi: 10.1021/jp908931w.
Gawrys, P., Djurado, D., Rimarcík, J., Kornet, A., Boudinet, D., Verilhac, J. M., Lukes, V., Wielgus, I., Zagorska, M., & Pron, A. (2010). Effect of N-substituents on redox, optical, and electronic properties of naphthalene bisimides used for field-effect transistors fabrication. The journal of physical chemistry. B, 114(5), 1803-9. https://doi.org/10.1021/jp908931w
Gawrys, Pawel, et al. "Effect of N-substituents on redox, optical, and electronic properties of naphthalene bisimides used for field-effect transistors fabrication." The journal of physical chemistry. B vol. 114,5 (2010): 1803-9. doi: https://doi.org/10.1021/jp908931w
Gawrys P, Djurado D, Rimarcík J, Kornet A, Boudinet D, Verilhac JM, Lukes V, Wielgus I, Zagorska M, Pron A. Effect of N-substituents on redox, optical, and electronic properties of naphthalene bisimides used for field-effect transistors fabrication. J Phys Chem B. 2010 Feb 11;114(5):1803-9. doi: 10.1021/jp908931w. PMID: 20085244.
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J Phys Chem B. 2010 Feb 11;114(5):1803-9. doi: 10.1021/jp908931w.

Effect of N-substituents on redox, optical, and electronic properties of naphthalene bisimides used for field-effect transistors fabrication.

The journal of physical chemistry. B

Pawel Gawrys, David Djurado, Ján Rimarcík, Aleksandra Kornet, Damien Boudinet, Jean-Marie Verilhac, Vladimír Lukes, Ireneusz Wielgus, Malgorzata Zagorska, Adam Pron

Affiliations

  1. Faculty of Chemistry, Warsaw University of Technology, Noakowskiego 3, 00 664 Warszawa, Poland.

PMID: 20085244 DOI: 10.1021/jp908931w

Abstract

Three groups of naphthalene bisimides were synthesized and comparatively studied, namely, alkyl bisimides, alkylaryl ones, and novel bisimides containing the alkylthienyl moiety in the N-substituent. The experimental absorption spectra measured in CHCl(3) exhibit one intensive absorption band that is uniformly detected in the spectral range of 340 to 400 nm for all studied molecules. This band consists of three or four vibronic peaks. The introduction of an alkylthienyl group results in the appearance of an additional band (in the spectral range from 282 to 326 nm, depending on the position of the substituent) that can be ascribed to the pi-pi* transition in the thienyl chromophore. The minimal substituent effect on the lowest electronic transitions was explained using the quantum chemical calculations based on the time-dependent density functional theory. The investigation of the shapes of frontier orbitals have also shown that the oxidation of bisimides containing thiophene moiety is primary connected with the electron abstraction from the thienyl ring. To the contrary, the addition of an electron in the reduction process leads to an increase in the electron density in the central bisimide core. As shown by the electrochemical measurements, the onset of the first reduction potential (so-called "electrochemically determined LUMO level") is sensitive toward the type of the substituent being shifted from about -3.72 eV for bisimides with alkyl substituents to about -3.83 eV for alkylaryl ones and to about -3.94 eV for bisimides with thienyl groups. The presence of the thienyl ring also lowers the energy difference between the HOMO and LUMO orbitals. These experimental data can be well correlated with the DFT calculations in terms of HOMO/LUMO shapes and energies. Taking into account the low position of their LUMO level and their highly ordered supramolecular organization, the new bisimides are good candidates for the use in n-channel field effect transistors, operating in air. The fabricated "all organic" transistors show effective charge carrier mobilities in the range 10(-2) to 10(-4) cm(2) V(-1) s(-1) and the ON/OFF ratios exceed 10(5) for the majority of cases.

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