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Liu Y, Chen TP, Yu SF, et al. Si-based light-emitting structure synthesized with low-energy ion implantation at a low dosage. J Nanosci Nanotechnol. 2010;10(1):595-8doi: 10.1166/jnn.2010.1589.
Liu, Y., Chen, T. P., Yu, S. F., Li, Z. X., Ding, L., Yang, M., Wong, J. I., Ng, C. Y., & Yuen, C. (2010). Si-based light-emitting structure synthesized with low-energy ion implantation at a low dosage. Journal of nanoscience and nanotechnology, 10(1), 595-8. https://doi.org/10.1166/jnn.2010.1589
Liu, Y, et al. "Si-based light-emitting structure synthesized with low-energy ion implantation at a low dosage." Journal of nanoscience and nanotechnology vol. 10,1 (2010): 595-8. doi: https://doi.org/10.1166/jnn.2010.1589
Liu Y, Chen TP, Yu SF, Li ZX, Ding L, Yang M, Wong JI, Ng CY, Yuen C. Si-based light-emitting structure synthesized with low-energy ion implantation at a low dosage. J Nanosci Nanotechnol. 2010 Jan;10(1):595-8. doi: 10.1166/jnn.2010.1589. PMID: 20352897.
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J Nanosci Nanotechnol. 2010 Jan;10(1):595-8. doi: 10.1166/jnn.2010.1589.

Si-based light-emitting structure synthesized with low-energy ion implantation at a low dosage.

Journal of nanoscience and nanotechnology

Y Liu, T P Chen, S F Yu, Z X Li, L Ding, M Yang, J I Wong, C Y Ng, C Yuen

Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, PR China.

PMID: 20352897 DOI: 10.1166/jnn.2010.1589

Abstract

In this work, Si-based light-emitting structures were synthesized by Si+ implantation into 30 nm thermally grown SiO2 films with a low dosage (< or =1 x 10(16)/cm2). The emission band of electroluminescence (EL) extends from 300 nm to 700 nm with a peak at around 500 nm. The onset voltage for the EL is around 5 V for the 8 keV implanted sample which is low enough for many device applications. The light emission mechanism is studied in this work. It is believed that the defects in the Si+ implanted SiO2 films are the luminescent centers responsible for the EL. In addition, it is found the light emission intensity can be affected by charge trapping in nc-Si.

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