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Hadjichristov GB, Stefanov IL. Ion-implanted polymethyl methacrylate beam splitter/coupler for 1.55 microm applications. Appl Opt. 2010;49(10):1876-9doi: 10.1364/AO.49.001876.
Hadjichristov, G. B., & Stefanov, I. L. (2010). Ion-implanted polymethyl methacrylate beam splitter/coupler for 1.55 microm applications. Applied optics, 49(10), 1876-9. https://doi.org/10.1364/AO.49.001876
Hadjichristov, Georgi B, and Stefanov, Ivan L. "Ion-implanted polymethyl methacrylate beam splitter/coupler for 1.55 microm applications." Applied optics vol. 49,10 (2010): 1876-9. doi: https://doi.org/10.1364/AO.49.001876
Hadjichristov GB, Stefanov IL. Ion-implanted polymethyl methacrylate beam splitter/coupler for 1.55 microm applications. Appl Opt. 2010 Apr 01;49(10):1876-9. doi: 10.1364/AO.49.001876. PMID: 20357873.
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Appl Opt. 2010 Apr 01;49(10):1876-9. doi: 10.1364/AO.49.001876.

Ion-implanted polymethyl methacrylate beam splitter/coupler for 1.55 microm applications.

Applied optics

Georgi B Hadjichristov, Ivan L Stefanov

Affiliations

  1. Laboratory of Optics and Spectroscopy, Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Boulevard, BG-1784 Sofia, Bulgaria. [email protected]

PMID: 20357873 DOI: 10.1364/AO.49.001876

Abstract

The applicability of layers of ion-implanted polymethyl methacrylate (PMMA) for beam splitting of laser light at the telecommunications wavelength of 1.55 mum is examined. Bulk PMMA is studied, subjected to low-energy (50 keV) silicon ion implantation at various ion fluences in the range from 10(14) to 10(17) cm(-2). The formed ultrathin near-surface ion-implanted layer of a thickness of about 100 nm, buried in a depth of approximately 100 nm, can be used to split (or combine) laser beams at 1.55 microm with a low absorption loss.

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