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Morris RJ, Dowsett MG, Beanland R, et al. Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancement. Rapid Commun Mass Spectrom. 2010;24(14):2122-6doi: 10.1002/rcm.4623.
Morris, R. J., Dowsett, M. G., Beanland, R., Parbrook, P. J., & McConville, C. F. (2010). Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancement. Rapid communications in mass spectrometry : RCM, 24(14), 2122-6. https://doi.org/10.1002/rcm.4623
Morris, R J H, et al. "Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancement." Rapid communications in mass spectrometry : RCM vol. 24,14 (2010): 2122-6. doi: https://doi.org/10.1002/rcm.4623
Morris RJ, Dowsett MG, Beanland R, Parbrook PJ, McConville CF. Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancement. Rapid Commun Mass Spectrom. 2010 Jul 30;24(14):2122-6. doi: 10.1002/rcm.4623. PMID: 20552690.
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Rapid Commun Mass Spectrom. 2010 Jul 30;24(14):2122-6. doi: 10.1002/rcm.4623.

Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancement.

Rapid communications in mass spectrometry : RCM

R J H Morris, M G Dowsett, R Beanland, P J Parbrook, C F McConville

Affiliations

  1. Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, UK. [email protected]

PMID: 20552690 DOI: 10.1002/rcm.4623

Abstract

Ultra-low-energy secondary ion mass spectrometry has been used to undertake a structural analysis of GaN-In(x)Ga(1-x)N (x approximately 0.25) quantum wells used in optoelectronic devices. The high resistivity of intrinsic GaN-In(x)Ga(1-x)N restricts the necessary electrical path between the analyzed area and the instrument ground potential resulting in surface charge accumulation. Consequently, unstable and unrepresentative depth profiles tend to be produced. A technique known as optical conductivity enhancement (OCE) has been used during depth profiling to reduce the material resistivity. This creates an electrical path between the sample and holder, eliminating charge build up and resulting in accurate depth profiles.

Copyright 2010 John Wiley & Sons, Ltd.

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