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Nourbakhsh A, Cantoro M, Vosch T, et al. Bandgap opening in oxygen plasma-treated graphene. Nanotechnology. 2010;21(43):435203doi: 10.1088/0957-4484/21/43/435203.
Nourbakhsh, A., Cantoro, M., Vosch, T., Pourtois, G., Clemente, F., van der Veen, M. H., Hofkens, J., Heyns, M. M., De Gendt, S., & Sels, B. F. (2010). Bandgap opening in oxygen plasma-treated graphene. Nanotechnology, 21(43), 435203. https://doi.org/10.1088/0957-4484/21/43/435203
Nourbakhsh, Amirhasan, et al. "Bandgap opening in oxygen plasma-treated graphene." Nanotechnology vol. 21,43 (2010): 435203. doi: https://doi.org/10.1088/0957-4484/21/43/435203
Nourbakhsh A, Cantoro M, Vosch T, Pourtois G, Clemente F, van der Veen MH, Hofkens J, Heyns MM, De Gendt S, Sels BF. Bandgap opening in oxygen plasma-treated graphene. Nanotechnology. 2010 Oct 29;21(43):435203. doi: 10.1088/0957-4484/21/43/435203. Epub 2010 Oct 04. PMID: 20890016.
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Nanotechnology. 2010 Oct 29;21(43):435203. doi: 10.1088/0957-4484/21/43/435203. Epub 2010 Oct 04.

Bandgap opening in oxygen plasma-treated graphene.

Nanotechnology

Amirhasan Nourbakhsh, Mirco Cantoro, Tom Vosch, Geoffrey Pourtois, Francesca Clemente, Marleen H van der Veen, Johan Hofkens, Marc M Heyns, Stefan De Gendt, Bert F Sels

Affiliations

  1. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. [email protected]

PMID: 20890016 DOI: 10.1088/0957-4484/21/43/435203

Abstract

We report a change in the semimetallic nature of single-layer graphene after exposure to oxygen plasma. The resulting transition from semimetallic to semiconducting behavior appears to depend on the duration of the exposure to the plasma treatment. The observation is confirmed by electrical, photoluminescence and Raman spectroscopy measurements. We explain the opening of a bandgap in graphene in terms of functionalization of its pristine lattice with oxygen atoms. Ab initio calculations show more details about the interaction between carbon and oxygen atoms and the consequences on the optoelectronic properties, that is, on the extent of the bandgap opening upon increased functionalisation density.

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