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Dylewicz R, Khokhar AZ, Wasielewski R, et al. Nanotexturing of GaN light-emitting diode material through mask-less dry etching. Nanotechnology. 2010;22(5):055301doi: 10.1088/0957-4484/22/5/055301.
Dylewicz, R., Khokhar, A. Z., Wasielewski, R., Mazur, P., & Rahman, F. (2011). Nanotexturing of GaN light-emitting diode material through mask-less dry etching. Nanotechnology, 22(5), 055301. https://doi.org/10.1088/0957-4484/22/5/055301
Dylewicz, Rafal, et al. "Nanotexturing of GaN light-emitting diode material through mask-less dry etching." Nanotechnology vol. 22,5 (2011): 055301. doi: https://doi.org/10.1088/0957-4484/22/5/055301
Dylewicz R, Khokhar AZ, Wasielewski R, Mazur P, Rahman F. Nanotexturing of GaN light-emitting diode material through mask-less dry etching. Nanotechnology. 2011 Feb 04;22(5):055301. doi: 10.1088/0957-4484/22/5/055301. Epub 2010 Dec 22. PMID: 21178226.
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