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Nanotechnology. 2011 Jul 01;22(26):265304. doi: 10.1088/0957-4484/22/26/265304. Epub 2011 May 18.

Focused electron beam induced etching of titanium with XeF2.

Nanotechnology

F J Schoenaker, R Córdoba, R Fernández-Pacheco, C Magén, O Stéphan, C Zuriaga-Monroy, M R Ibarra, J M De Teresa

Affiliations

  1. Instituto de Nanociencia de Aragón, Universidad de Zaragoza, Zaragoza, Spain.

PMID: 21586811 DOI: 10.1088/0957-4484/22/26/265304

Abstract

Titanium is a relevant technological material due to its extraordinary mechanical and biocompatible properties, its nanopatterning being an increasingly important requirement in many applications. We report the successful nanopatterning of titanium by means of focused electron beam induced etching using XeF(2) as a precursor gas. Etch rates up to 1.25 × 10(-3) µm(3) s(-1) and minimum pattern sizes of 80 nm were obtained. Different etching parameters such as beam current, beam energy, dwell time and pixel spacing are systematically investigated, the etching process being optimized by decreasing both the beam current and the beam energy. The etching mechanism is investigated by transmission electron microscopy. Potential applications in nanotechnology are discussed.

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