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Tessema G. Effects of external stress on defect complexes in semiconductors. J Phys Condens Matter. 2007;19(26):266201doi: 10.1088/0953-8984/19/26/266201.
Tessema, G. (2007). Effects of external stress on defect complexes in semiconductors. Journal of physics. Condensed matter : an Institute of Physics journal, 19(26), 266201. https://doi.org/10.1088/0953-8984/19/26/266201
Tessema, Genene. "Effects of external stress on defect complexes in semiconductors." Journal of physics. Condensed matter : an Institute of Physics journal vol. 19,26 (2007): 266201. doi: https://doi.org/10.1088/0953-8984/19/26/266201
Tessema G. Effects of external stress on defect complexes in semiconductors. J Phys Condens Matter. 2007 Jul 04;19(26):266201. doi: 10.1088/0953-8984/19/26/266201. Epub 2007 Jun 04. PMID: 21694078.
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J Phys Condens Matter. 2007 Jul 04;19(26):266201. doi: 10.1088/0953-8984/19/26/266201. Epub 2007 Jun 04.

Effects of external stress on defect complexes in semiconductors.

Journal of physics. Condensed matter : an Institute of Physics journal

Genene Tessema

Affiliations

  1. Department of Physics, Addis Ababa University, PO Box 1176, Addis Ababa, Ethiopia. Helmholtz-Institut für Strahlen und Kernphysik, Nussalle 14-16, 53115 Bonn, Germany.

PMID: 21694078 DOI: 10.1088/0953-8984/19/26/266201

Abstract

Crystal field gradients that exist at lattice sites in solids depend on the symmetry of charge distribution around atomic sites. The charge symmetry could be broken either by the presence of impurity complexes in the host matrix or by external stress on the samples, which leads to an observable magnitude of electric field gradients (EFGs). The perturbed γ-γ angular correlation (PAC) method is employed here to investigate the effect of uniaxial stress on (111)Cd sites in crystalline doped semiconductors.

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