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Camara N, Jouault B, Jabakhanji B, et al. Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates. Nanoscale Res Lett. 2011;6(1):141doi: 10.1186/1556-276X-6-141.
Camara, N., Jouault, B., Jabakhanji, B., Caboni, A., Tiberj, A., Consejo, C., Godignon, P., & Camassel, J. (2011). Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates. Nanoscale research letters, 6(1), 141. https://doi.org/10.1186/1556-276X-6-141
Camara, Nicolas, et al. "Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates." Nanoscale research letters vol. 6,1 (2011): 141. doi: https://doi.org/10.1186/1556-276X-6-141
Camara N, Jouault B, Jabakhanji B, Caboni A, Tiberj A, Consejo C, Godignon P, Camassel J. Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates. Nanoscale Res Lett. 2011 Feb 14;6(1):141. doi: 10.1186/1556-276X-6-141. PMID: 21711670; PMCID: PMC3211189.
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Nanoscale Res Lett. 2011 Feb 14;6(1):141. doi: 10.1186/1556-276X-6-141.

Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates.

Nanoscale research letters

Nicolas Camara, Benoit Jouault, Bilal Jabakhanji, Alessandra Caboni, Antoine Tiberj, Christophe Consejo, Philipe Godignon, Jean Camassel

Affiliations

  1. Laboratoire Charles Coulomb, UMR 5221 CNRS-UM2, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France. [email protected].

PMID: 21711670 PMCID: PMC3211189 DOI: 10.1186/1556-276X-6-141

Abstract

Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.

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